inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF250 description drain current C i d =30a@ t c =25 drain source voltage- : v dss = 200v(min) static drain-source on-resistance : r ds(on) =0.085 (max) nanosecond switching speed applications switching power supplies switching converters,motor driver,relay driver absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 20 v i d drain current-continuous@ t c =25 30 a p tot total dissipation@t c =25 150 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.83 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF250 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =250 a 200 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =16a 0.085 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =200v; v gs =0 250 ua v sd diode forward voltage i s =30a; v gs =0 2.0 v c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 2000 3000 pf c rss reverse transfer capacitance 300 500 c oss output capacitance 800 1200 t r rise time i d =16a; v dd =95v; r l =4.7 100 ns t d(on) turn-on delay time 35 t f fall time 100 t d(off) turn-off delay time 125 pdf pdffactory pro www.fineprint.cn
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